PART |
Description |
Maker |
GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
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GSI Technology
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K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IDT709149S 709149_DS_24983 IDT709149S8PF IDT709149 |
4K x 9 Sync, Dual-Port RAM, Pipelined HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM From old datasheet system
|
IDT[Integrated Device Technology]
|
K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P40 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through 64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM From old datasheet system
|
IDT[Integrated Device Technology]
|
K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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GS8322Z72GC-225V GS8322Z36GB-166V GS8322Z36E-133V |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 6.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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GS882ZV18BB-200 GS882ZV36BB-200 GS882ZV18BB-300 GS |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 4.5 ns, PBGA119 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 5 ns, PBGA119 9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 5 ns, PBGA165 9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
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GSI Technology, Inc. http://
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IDT71V67603S166BGGI IDT71V67803S133PFG IDT71V67803 |
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 4.2 ns, PQFP100
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IDT INTEGRATED DEVICE TECHNOLOGY INC DB Lectro, Inc. Integrated Device Technology, Inc.
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